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Application of Magnesium Nitride

wallpapers Tech 2021-06-10
Magnesium nitride, which possesses the chemical formula Mg3N2, is an inorganic compound of magnesium and nitrogen. Mg3N2 micron powder has a greenish-yellow color and has a melting point of approximately 1500℃. It can be prepared by passing dry nitrogen or ammonia over heated magnesium. Magnesium nitride is a bandwidth of 2.8 eV direct bandgap semiconductor, in the preparation of light-emitting diodes, it has potential application value. Magnesium nitride micron powder can be used in the preparation of other nitride compounds with high hardness, high thermal conductivity, corrosion resistance, wear resistance, and high-temperature resistance properties. It can be used for the preparation of special ceramic material and for special alloy blowing agents. Besides, it can be used for the manufacture of special glass and catalyzed polymer cross-linked. Also, it can be used for producing the synthesis of synthetic diamond and cubic boron nitride catalyst materials and for high-strength steel smelting additives.
 
What Is Added to Magnesium Nitride to Make Magnesium Oxide?
When liquid water is added to magnesium nitride, the products are magnesium hydroxide and ammonia. When the magnesium hydroxide is heated, it will produce magnesium oxide and water. These reactions can be used to purify synthesized magnesium oxide: Heating solid magnesium will produce both magnesium oxide and magnesium nitride. Hence, adding water to the resulting solids and heating them will produce pure magnesium oxide.
 
Chemical Equations
The balanced chemical equation for the first part of the reaction is Mg3N2(s) + 6H2O(l) → 3Mg(OH)2(s) + 2NH3(g). With heat added, the equation for the final step of the reaction is Mg(OH)2(s) → MgO(s) + H2O(l). If you assume constant heating, you could rewrite this series of reactions as Mg3N2(s) + 3H2O(l) → 3MgO(s) + 2NH3(g).
 
The possibility of using Mg3N2 as a new crystalline semiconductor in the blue-violet range.
Single-crystalline Mg3N2 thin films are grown on MgO (100) substrates with plasma-assisted molecular beam epitaxy. To prevent the oxidation of the Mg3N2 films and allow further physical characterization, a polycrystalline MgO cap is deposited in situ. The growth orientation of the Mg3N2 films can be tuned from (100) to (111) by changing the growth conditions, and the associated epitaxial relationships have been determined by means of x-ray diffraction. The lattice constant of Mg3N2 films has been monitored as a function of temperature from 300 to 900 K, determining thereby the linear thermal expansion coefficient. Transmission measurements indicate an optical bandgap of crystalline Mg3N2 around 2.9 eV at room temperature, consistent with diffuse reflectance measurements on micrometric Mg3N2 particles. These results demonstrate the possibility of exploiting Mg3N2 as a new crystalline semiconductor in the blue-violet range.

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